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2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
2) TO-262 (MP-25 Fin Cut)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
10 TYP.
4.8 MAX.
1.3±0.2
4
4
1
2
3
1 2 3
1.3±0.2
1.3±0.2
0.75±0.3
0.5±0.2
2.8±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
2.8±0.2
2.54 TYP.
2.54 TYP.
1.Gate
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
10 TYP.
4.8 MAX.
10 TYP.
4.8 MAX.
4
1.3±0.2
4
1.3±0.2
1
2
3
1
2
3
P.
0.8
.8R
1.4±0.2
0.7±0.2
2.54 TYP.
0.5
2.54 TYP.
R
TY
R
T
YP
.
0.5±0.2
1.4±0.2
0.75±0.3
2.54 TYP.
0.
2.54 TYP.
5R
0
TY
P.
TY
P.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This Package is only produced in Japan.
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually
Gate
Gate
Drain
Body
Diode
used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
Protection
Diode
Source
Data Sheet D15617EJ1V0DS
7
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